SK Hynix starts mass production of 238-layer NAND flash
South Korea’s SK Hynix Inc. has started mass production of its 238-layer 3D-NAND flash memory, following the product’s announcement in August 2022.
The company said that testing with a smartphone manufacturer is underway.
The 238-layer product has a 34 percent higher manufacturing efficiency compared to the previous generation of 176-layer, resulting in a improvement in cost competitiveness. The chip has a data-transfer speed of 2.4Gbits per second, a 50 percent increase from the previous generation, and approximately 20 percent increase in read and write speed,
The chip is roughly the same number of layers as products from YMTC and Micron (232 layers).
SK Hynix will begin supplying the 238-layer NAND product for smartphones, and expand the technology across its product portfolio such as PCIe 5.0 solid-state drives (SSDs) and high-capacity server SSDs going forward.
PCIe(Peripheral Component Interconnect Express) is a serial high-speed I/O interface used in the main boards of digital equipment. The PCIe 5.0 iteration of the standard doubles the data rate from PCIe 4.0 to 32 gigatransfers per second.
“We will continue to overcome NAND technology limitations and increase our competitiveness so that we can achieve a bigger turnaround than anyone else during the upcoming market rebound,” said Jumsoo Kim, head of S238 NAND at SK Hynix, in a statement.
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