Small signal MOSFET transistors offers power savings to extend battery life of mobile devices
The new family of FemtoFET MOSFET transistors features ultra-small packaging and on-resistance below 100 milli-ohm.
The three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40 percent when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 feature ultra-low on-resistance below 100 milli-ohm, which is 70-percent lower than similar devices in the market today. All the FemtoFET MOSFETS provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM).
The FemtoFET MOSFETS join TI’s portfolio of NexFET power MOSFETS that includes the CSD25213W10 P-channel and CSD13303W1015 N-channel devices for portable applications, including cell phones. TI offers an extensive line of power management products designed to save board space and reduce power consumption in handheld applications, such as the LP5907 high-current, low-dropout (LDO) linear voltage regulator and TPS65090 front-end power management unit (PMU).
The FemtoFET MOSFET family has an on-resistance under 100 milli-ohm which is 70-percent lower than similar devices, providing power savings and longer battery life.
Measuring 0.6-mm by 1.0-mm by 0.35-mm, the FemtoFET LGA packages are 40-percent smaller than standard CSP.
The device’s continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today.
Availability and Pricing
Available in volume now from TI and its authorized distributors, the FemtoFET MOSFETs range in price from $0.06 in 1,000-unit quantities for the CSD17483F4, to $0.10 for the CSD17381F4.
More information about the FemtoFET MOSFET transistors at
www.ti.com/femtofet-pr-eu
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