Smaller MOSFET gate driver for wearables

Smaller MOSFET gate driver for wearables

New Products |
By Nick Flaherty

Toshiba Electronics Europe has launched the first of six MOSFET gate drivers measuring just 1.2mm x 0.8mm for wearables and smartphones.

The TCK421G controls the gate voltage of external N-channel MOSFETs based upon the input voltage for configuring a power multiplexer or a load switch circuit equipped with reverse-current blocking.

The gate driver uses a charge pump circuit that supports a wide range of input voltages (VIN) from 2.7 to 28.0V. This provides a stable supply of 10V to the gate-source voltage of external MOSFETs for switching large currents with back-to-back MOSFETs.

The typical input quiescent current in the ON state (IQ(ON)) is as low as 140mA while the standby current in the OFF state (IQ(OFF)) is just 0.5mA. In addition, the TCK421G contains an overvoltage and undervoltage lockout function. The gate drive voltage can be selected to suit the application.

Housed in the chip scale WCSP6G package, the device has a height of 0.35mm, making it one of the smallest packages in the industry.

The TCK421G is the first product launched in a series that will eventually comprise six devices. Due to its high efficiency and small size, the new driver can be used in a wide range of applications including battery powered, consumer and industrial equipment.

The TCK421G is available now

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