SMT radiation hardened MOSFETs increase efficiency at half the footprint

New Products | August 18, 2013

By eeNews Europe

Power Management

The new R8 logic level power MOSFETs use Trench technology to offer extremely low on-state resistance of 12 milliohms (typical) and a total gate charge of 18nC (typical). The device increases efficiency performance by up to 6% compared to existing solutions, claims the manufacturer. The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current rating of 17A. The new devices are available in IR’s new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.

The products are fully characterized for radiation performance to 300Krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12V. Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be well suited for applications requiring a mission life of 15 years or more.

Visit International Rectifier at www.irf.com

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