Soitec to produce POI substrates for Qualcomm 5G RF filters
Soitec’s piezoelectric-on-insulator substrate offers a strong value proposition to 5G RF filters for smartphone mass markets. The agreement will bring POI wafer production to high volume manufacturing of RF filters going into smartphone RF front end modules.
“With our game-changing thin-film technology and innovation in the Qualcomm® ultraSAW RF filter products, we continue to push the boundaries of what’s possible in mobile technology”, said Christian Block, senior vice president and general manager, RFFE, Qualcomm Germany RFFE GmbH. “This agreement with Soitec is key to ensure the supply of high-performance POI substrates from Soitec, and to securely support the demand from our OEM customers for high-performance Qualcomm ultraSAW RF filter products. The combination of Soitec Smart Cut™ based Piezoelectric-On-Insulator substrates and Qualcomm Technologies’ filter design and system expertise leads to high-yield multiplexers with multiple filter functions per die.”
POI is an innovative substrate manufactured thanks to Soitec’s proprietary Smart Cut™ technology in 150 mm. At its foundation lies a high resistivity silicon substrate, complemented by a buried oxide layer and a very thin and uniform layer of a mono-crystal piezo material on top. Soitec’s POI engineered substrates have been designed to build the latest generation of 4G/5G Surface Acoustic Wave (SAW) filters. They offer performance with built-in temperature compensation.
Executive Vice President of Soitec’s Global Business Units. “Soitec has a long experience in serving RF markets notably with large RF-SOI volumes. We are confident in our ability to handle high-volume production for POI to become a standard in materials for 5G RF filters, thanks to our robust and proven Smart Cut™ technology”.