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SONOS-based Flash and embedded EEPROM now in 180nm BCD-on-SOI

SONOS-based Flash and embedded EEPROM now in 180nm BCD-on-SOI

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By eeNews Europe



The addition of these Non-Volatile Memory (NVM) elements will open up an even broader array of applications where high-voltage ratings and resilience to elevated temperatures need to be coupled with enhanced computational capabilities. An increasing number of applications are requiring microcontroller-based solutions that incorporate embedded Flash and EEPROM in combination with high-voltage operation (up to 100V), high-temperature capability and ESD/EMC resilience. The EEPROM part is specifically optimized for use cases where memory blocks need to be reprogrammed many times (at wafer level, as well as in the field). X-FAB’s SONOS technology supports operation at junction temperatures from -40°C up to 175°C, in compliance with automotive AEC-Q100 grade-0 quality standards.
The new X-FAB NVM solution includes a single block of 32kBytes of Flash memory, plus 4kbits of EEPROM capacity. Both these elements employ the company’s SONOS technology and leverage the strong reliability and experiences already demonstrated by the 180nm bulk process (XH018). The Flash and EEPROM sub blocks can operate at 1.8V single-voltage and can be accessed independently while sharing the same peripheral interface, thereby achieving a best-in-class footprint.
X-FAB – www.xfab.com

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