Volume production of a perpendicular magnetic tunnel junction (pMTJ) style of STT-MRAM is expected from Sony early in 2017 on 300mm wafers at a variety of manufacturing nodes.
Avalanche said it is currently sampling discrete parts up to 64Mbit in capacity to customers and is now poised to ramp the first pMTJ-based MRAM memory in the industry to production in early 2017.
“STT-MRAM is an ideal solution for markets such as storage, automotive, IoT and embedded applications,” said Petro Estakhri, founder and CEO of Avalanche Technology, in a statement.
Rival MRAM company Everspin announced it was sampling a 256Mbit memory earlier in 2016 and that it planned to sample a 1Gbit MRAM based on proprietary pMTJ spin-torque technology later this year.
Avalanche’s STT-MRAM technology is backed by 229 awarded patents, the company said.
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