Source-gate transistor offers better large-area electronics
The source-gain transistor (SGT) is discussed in a paper published in IEEE Sensors Journal. It is authored by researchers from University of Surrey, University of Cambridge and the National Research Institute in Rome.
The SGT offers possibilities for low-cost, large-area applications in two extremely compact circuit blocks. Polysilicon common-source amplifiers show 49 dB gain, the highest reported for a two-transistor unipolar circuit. Current mirrors fabricated in polysilicon and InGaZnO have, in addition to excellent current copying performance, the ability to control the temperature dependence of output current solely by choice of relative transistor geometry.
In the case of the two-transistor unipolar source the researchers found that that they are able to achieve the same functionality from two SGTs as would normally be the case from today’s devices that use roughly 12 TFTs with improved signal integrity.
SGT-based circuits could lead to lightweight, flexible electronics for wearables and sensors, the researchers argue.
“Our design offers a much simpler build process than regular thin-film transistors,” said lead author Radu Sporea of the University of Surrey.
Related links and articles:
News articles:
IMEC provides DRAM review, mulls R&D directions
ARM’s next bet for plastic chips: neural networks
