SPDT RF switch highly resistant to radiation effects in harsh space environments
The switch features HaRP™ technology enhancements for high linearity of 60 dBm IIP3. It is suitable for applications such as RF switch matrices, antenna arrays, and RF communication systems, with an operating frequency up to and including the C-band in commercial satellites, manned spacecraft, and high-altitude aircraft.
As a result of the inherent physical properties of the highly-insulating sapphire substrate, devices manufactured on UltraCMOS technology are naturally immune to radiation-induced latchup. Further design enhancements ensure exceptionally low levels of performance drift under total dose conditions up to 100 krads (ELDRS free).
The PE95421 switch features low-complexity, single-pin 3.3 V CMOS logic control in a single chip. It has low insertion loss ranging from 0.77 dB at 100 MHz to 1.38 dB at 8500 MHz, and high isolation ranging from 86.5 dB at 100 MHz to 27.8 dB at 8500 MHz. Low power consumption of 3.3 µW at 3.3 V and high ESD tolerance up to 1000 V HBM further enhance the ease-of-use of this device.
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