SPI FRAMs in 0.18µm technology up to 256Kbit
FRAM (Ferroelectric Random Access Memory) combines the advantages of fast writing SRAM with non-volatile Flash into one device. The new SPI FRAM family MB85RSxxx incorporates three devices: MB85RS256A, MB85RS128A and MB85RS64A, which represent three density levels of 256Kbit, 128Kbit and 64Kbit respectively. All devices operate at a voltage range between 3.0 and 3.6V and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C. Operating frequency has been significantly increased to a maximum of 25MHz, and since FRAM products render voltage boosters unnecessary for the writing process, they are well-suited for low power applications. The products are offered in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.
Visit Fujitsu Semiconductor Europe at https://emea.fujitsu.com/fram
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