Silicon carbide (SiC) modules form STMicroelectronics are being used for an electric vehicle platform shared by a number of car makers.
Five new SiC-MOSFET based power modules provide flexible choices for vehicle makers, covering a selection of power ratings and support for operating voltages commonly used in EV traction applications.
The ACEPACK DRIVE package uses sintering technology for a robust module that is easy for manufacturers to integrate in EV drives. The modules feature active metal brazed (AMB) substrate technology, known for excellent thermal efficiency and mechanical strength, mounting a dedicated NTC for each substrate.
They are also available with a choice of welded or screw-fit busbar, giving flexibility to address different mounting requirements. A long-busbar option further extends the flexibility by allowing the choice of a Hall sensor to monitor the motor current.
Internally, the main power semiconductors are ST’s third generation SiC MOSFETs, which combine industry-leading figure of merit (RDS(ON) x die area) with very low switching energy and super performance in synchronous rectification.
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“ST silicon carbide solutions are enabling major automotive OEMs to set the pace of electrification when developing future generations of EVs,” said Marco Monti, President, Automotive and Discrete Group, STMicroelectronics. “Our third-generation SiC technology ensures the greatest power density and energy efficiency, resulting in superior vehicle performance, range, and charge time.”
Hyundai Motor Company has chosen the modules for its current-generation EV platform, called E-GMP. In particular, the modules will power the Kia EV6.
“ST’s SiC-MOSFET based power modules are the right choice for our traction inverters, enabling longer range. The cooperation between our two companies has realized a significant step towards more sustainable electric vehicles, leveraging ST’s continuous technological investment to be the leading semiconductor actor in the electrification revolution,” said Sang-Cheol Shin, Inverter Engineering Design Team at Hyundai Motor Group.
ST has already supplied SiC devices for more than three million mass-produced passenger cars worldwide, which has driven its decision to build a dedicated SiC fab and wafer factory in Catania, Sicily, that is expected to start production in 2023.
ST’s 1200V ADP280120W3, ADP360120W3, ADP480120W3(-L) are already in full production. The 750V ACEPACK DRIVE ADP46075W3 and ADP61075W3 will be in full production by March 2023.
They enable a plug-and-play solution for traction inverters, compatible with direct liquid cooling, and featuring a pin-fin array for efficient heat dissipation. Specified up to a maximum junction temperature of 175°C, they provide long-lasting and reliable press-fit connections and dice sintered to substrate to ensure extended lifetime in automotive applications. ST will extend the product portfolio to include IGBT and diode-based ACEPACK DRIVE versions.