STMicroelectronics is working with the Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) in Singapore on silicon carbide (SiC) technology.
The two are working on integrated SiC devices and package modules to offer significantly better performance in next-generation power electronics. This will create a comprehensive SiC ecosystem in Singapore and creates opportunities for other companies to engage with IME and ST in SiC research.
“We are pleased to collaborate with STMicroelectronics to develop breakthrough technologies that meet the needs of the growing electric vehicles market. Such efforts will continue to anchor high-value R&D activities in Singapore and bolster its reputation as an attractive regional hub for research, innovation and enterprise,” said Prof Dim-Lee Kwong, Executive Director of IME.
“This new collaboration with IME encourages the growth of a silicon carbide ecosystem in Singapore, as we ramp up our manufacturing activities there in addition to Catania (Italy). The multi-year collaborative effort helps us scale up our global R&D effort across our existing programs managed out of Catania and Norrköping (Sweden), covering the entire SiC value chain,” said Edoardo Merli, Power Transistor Macro-Division General Manager and Group Vice President of STMicroelectronics Automotive and Discrete Group. “IME’s strong knowledge and expertise in wide bandgap materials, and notably SiC, supports us in accelerating the development of new technologies and products addressing the challenges of sustainable mobility and better energy efficiency in a wide spectrum of applications.”
STMicroelectronics has a range of SiC transistors operating at 1200V and 1700V for high power EV traction inverters and solar photovoltaic systems. These are produced at ST’s fab in Catania, Sicily, with plans for production at the new fab in Agrate.
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