European chip maker STMicroelectronics NV has announced a plan to build an integrated silicon-carbide epitaxial substrate manufacturing facility in Catania, Italy, at a cost of $730 million.
The money will be spent over five years with support from the Italian government and will create about 700 direct jobs when the plant is fully built out. The investment is intended to help ST reach 40 percent internal SiC substrate sourcing by 2024. Production is expected to start in 2023.
The plant will be built alongside ST’s SiC wafer fab creating an integrated facility for the production in volume of 150mm-diameter SiC epitaxial substrates, integrating all steps in the production flow. ST also said it is committed to developing 200mm wafers.
ST said the integrated facility will help satisfy the increasing demand for SiC devices across automotive and industrial applications.
“ST is transforming its global manufacturing operations, with additional capacity in 300mm manufacturing and a strong focus on wide bandgap semiconductors to support its $20+B revenue ambition. We are expanding our operations in Catania, the center of our power semiconductor expertise and where we already have integrated research, development and manufacturing of SiC with strong collaboration with Italian research entities, universities and suppliers,” said Jean-Marc Chery, CEO of STMicroelectronics, in a statement.
ST’s SiC power devices are manufactured in fabs in Catania and Ang Mo Kio (Singapore) with assembly and test done at back-end sites in Shenzhen (China) and Bouskoura (Morocco).
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