Step recovery diodes offer low snap time and low capacitance
New Products
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By
Jean-Pierre Joosting
These SRDs utilize controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. The diodes offer low snap time through voltages ranging from 8 VDC to 120 VDC. Capacitances at 6 VDC range from 0.2 pF to 3 pF.
Discontinued by many suppliers, SemiGen has opted to make these devices available for customers servicing legacy RF and microwave systems.
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