Strain engineering boost for scalable on-chip photonic lasers

Strain engineering boost for scalable on-chip photonic lasers

Technology News |
By Nick Flaherty

Researchers in Singapore have developed a scalable technique to produce identical on-chip lasers by dynamically controlled strain engineering.

The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to building large-scale optical and quantum photonic circuits.

The ability to have a large number of on-chip lasers with precisely controlled wavelengths is ley for the next generation of AI chips in datacentres to boost the data rates in and out of the chips, and is even an approach being explored to connect chiplets in a package.

Using localized laser annealing to control the strain in the laser gain medium allows the emission wavelengths of several GeSn one-dimensional photonic crystal nanobeam lasers to be precisely matched whose initial emission wavelengths are significantly varied.

The technique changes the GeSn crystal structure in a region far away from the gain medium by inducing Sn segregation in a dynamically controllable manner, enabling the emission wavelength tuning of more than 10nm without degrading the laser emission properties such as intensity and linewidth.

The researchers at Nanyang Technological University see this as a way to scale up the number of identical light sources for the realization of large-scale photonic-integrated circuits.


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