Sub-1-mΩ, 40V/45V N-ch power MOSFET

Sub-1-mΩ, 40V/45V N-ch power MOSFET

New Products |
By Graham Prophet

Nine 40V and five 45V devices are intended for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies and motor drives. They use Toshiba’s low-voltage trench structure U-MOS IX-H process to combine minimum on-resistance with low output charge. Depending on the device, maximum RDS(ON) (@VGS=10V) ranges from 0.80 mΩ to 7.5 mΩ.


The FETs’ structure lowers the performance index for the RDS(ON) * Qsw figure of merit, improving switching applications to a level surpassing current Toshiba products. Output loss is improved by the reduction of output charge, which can contribute to higher system efficiency. The cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering system EMI.


Main Packages are SOP-Advance 5 x 6 mm and TSON-Advance 3 x 3mm. All of the new devices support 4.5V logic-level drives.





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