Super mini DIPIPM combines low radiation noise and low power consumption
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eeNews Europe
The device features a built-in low-noise seventh-generation insulated gate bipolar transistor (IGBT) with a CSTBT structure to reduce radiation noise while still maintaining the low-power consumption level of the Super mini DIPIPM Ver.6.
Module case operation temperature has been raised from 100 to 125ºC and maximum junction temperature has been raised from 150 to 175ºC to expand the heat-dissipation design flexibility of inverter systems. The 24.0×38.0×3.5mm package has a 40A current and is pin compatible with conventional Super mini DIPIPM series.
Mitsubishi Electric – www.MitsubishiElectric.com
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