SuperFET III MOSFETs claim efficiency and reliability gains
SuperFET III technology claims the lowest Rdson in any easy drive version of a Super Junction MOSFET, delivering best-in-class efficiency. It achieves this thanks to advanced charge balancing technology which also enables 44& lower Rdson than its SuperFET II predecessors, in the same package size. A key factor in the SuperFET III’s exceptional ruggedness and reliability is its optimized body diode and three times better single pulse Avalanche Energy (EAS) performance than its closest competitor.
The lower peak drain-source voltage during turn off of the 650V SuperFET III improves system reliability in low temperature operation because the breakdown voltage naturally drops by 5% at -25℃ junction temperature than room temperature and the peak drain-source voltage becomes higher at low temperature.
These reliability advantages are particularly important for industrial applications such as solar inverters, Uninterruptable Power Supplies (UPS) and EV chargers which must be capable of enduring higher or lower external ambient temperatures.
The SuperFET III MOSFET family is available today in multiple package and parametric options:
|
Device Number |
RDS(on) (max) (mΩ) @ VGS=10V |
Qg (Typ) (nC) @ VGS=10V |
Package |
|
23 |
222 |
TO-247 4L |
|
|
23 |
222 |
TO-247 3L |
|
|
67 |
78 |
TO-247 3L |
|
|
67 |
78 |
TO-220 3L |
|
|
67 |
78 |
TO-220F 3L |
|
|
70 |
78 |
TO-263 2L (D2-PAK) |
Fairchild; fairchildsemi.com/superfet
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