Superjunction 650 V CoolMOS MOSFETs target electromobility applications

Superjunction 650 V CoolMOS MOSFETs target electromobility applications

New Products |
By Christoph Hammerschmidt

The CoolMOS CFD7A power devices are compatible with system voltages up to 475 V. Based on the Kelvin source concept, a very high efficiency is achieved with a measured maximum efficiency of up to 98.4 percent. With the integrated fast body diode and a broad portfolio of TO and SMD packages, the CFD7A components are predestined for PFC and DC/DC power stages. With the new product family, higher switching frequencies and lower gate losses can be achieved. This allows compact designs with higher power density to be realized.

In addition, the new CoolMOS technology is also specially designed for the harsh automotive environments, especially with regard to cosmic background radiation and design robustness. The influences of the cosmic background radiation in particular were taken into account from the very beginning of the development and confirmed by experimental investigations. Overall, the CFDA series meets requirements that go beyond the AEC Q101 standard for automotive semiconductor components.

A broad portfolio of packages for the new power semiconductors (TO-220, TO-247, TO-247 (short leads), 3-pin and 7-pin D²PAK) enables easy design-in to take advantage of the new product benefits. For example, using 650 V CoolMOS CFD7A technology in a 7-pin D²PAK package, customers benefit not only from higher efficiency but also from good thermal performance and extended creepage distance.

The CoolMOS CFD7A family is manufactured on a highly automated 300mm production line. This meets both market demand and the high quality standards (zero defect) for volume production.

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