Superjunction MOSFETs boost ZVS performance

Superjunction MOSFETs boost ZVS performance

New Products |
By Nick Flaherty

STMicroelectronics has launched an optimised automotive version of its 650V superjunction MOSFETs for zero voltage switching (ZVS).

The STPOWER MDmesh DM9 AG series are aimed at on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies including ZVS. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage that results in sharper switching for lower turn-on and turn-off losses.

In addition, body-diode reverse recovery is improved, using an optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series suitable for higher efficiency phase-shift ZVS topologies.

The family is available in through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes.

Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK SMIT topside-cooled surface-mount packages are also available.

The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on) for ZVS designs. ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.

The STH60N099DM9-2AG is available now from the ST eStore, from $4.98.



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