The devices are all qualified to AEC-Q101, and exceed the requirements of this international automotive standard by as much as a factor of two on key reliability tests including temperature cycling, high temperature gate bias, high temperature reverse bias and intermittent operating life.
The LFPAK56E is an enhanced version of the popular LFPAK56 package, with an optimised lead frame and package design that results in an improvement in RDS(on) and power density of up to 30%. This improvement in power density enables the Trench 9 LFPAK56 MOSFETs to be used in applications previously only possible with D2PAK and D2PAK-7, delivering significant PCB space-savings.
The superjunction technology offers an improved avalanche and SOA (safe operating area) capability when compared to competing technology ensuring critical devices survive even in fault conditions. Trench 9 is specifically designed to offer exceptional single shot and repetitive avalanche performance.
“To facilitate autonomous driving, automotive manufacturers are requesting dual-redundant circuits for many critical applications such as power steering and braking,” said Norman Stapelberg, Nexperia’s product marketing manager for Automotive MOSFETs. “The challenge for tier 1 subsystem suppliers is to add the additional power components to their modules without increasing the overall PCB or module size. The combination of our Trench 9 superjunction technology with our LFPAK56 and LFPAK56E packaging capability gives Nexperia a performance and reliability advantage, and the reduction in footprint allows customers to add the additional devices required for dual-redundancy without significantly increasing the total PCB area.”
Applications include brushed and brushless motor control for power steering, transmission control, ABS, ESC, pumps (water, oil and fuel), fan speed control, reverse battery protection and DC-DC converters. Devices are sampling now.
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