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SuperQ MOSFETs set new safety benchmark for high-voltage battery packs

SuperQ MOSFETs set new safety benchmark for high-voltage battery packs

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By eeNews Europe



iDEAL Semiconductor has introduced its SuperQ MOSFET platform, a new power-device technology targeting the growing safety and efficiency challenges in 72-V-and-above battery management systems (BMS). The company note in a release that it is positioning the first 150-V, 2.5-mΩ device as a breakthrough in short-circuit safety performance, arguably the most critical metric in high-energy battery designs.

For eeNews Europe readers working on e-mobility, industrial tools, or next-gen battery platforms, the announcement is timely. The combination of higher pack voltages and tougher safety requirements makes component-level robustness essential, and iDEAL’s data suggests a measurable step forward worth noting.

Short-circuit robustness takes center stage

High-voltage battery systems are rapidly proliferating across e-mobility, heavy-duty drones, and professional cordless power tools. With this trend comes a well-known risk: an external short-circuit can trigger current surges in the thousands of amps. In these conditions, the BMS discharge MOSFET must isolate the pack before catastrophic damage occurs, which is why its short-circuit withstand capability (SCWC) has become a defining safety metric.

iDEAL’s flagship device — the iS15M2R5S1T in a TOLL package — pairs 150-V blocking capability with just 2.5 mΩ RDS(on). According to the company’s internal tests, the device sustained 800 A during short-circuit stress, compared with 580 A for a leading competing MOSFET of the same voltage and on-resistance rating. That 1.4× improvement is attributed to a proprietary cell structure engineered to widen the conduction region and reinforce structural integrity under extreme thermal and electrical load.

System-level impact

For battery-pack engineers, SCWC improvements translate into practical design wins. Because each SuperQ MOSFET can tolerate higher fault currents, designers may be able to reduce parallel device counts by up to 50% while still meeting safety targets. Fewer FETs mean a simpler layout, a slimmer BOM, and improved reliability, all without sacrificing the ultra-low on-resistance required for efficiency and thermal performance.

According to iDEAL, the platform’s initially released 150-V device is available now, with variants extending up to 200 V for systems exceeding 144 V. As high-voltage architectures continue gaining traction across Europe’s fast-moving mobility and industrial segments, SuperQ enters the market with a compelling combination of efficiency, robustness, and cost reduction.

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