The two companies have agreed to combine SureCore’s memory compiler technology with Intrinsic’s silicon-oxide based non-volatile memory resistive RAM cell.
Intrinsic is a 2017 spin-off from University College London that has followed a similar route to Weebit Nano Ltd. in that it uses the properties of thin layers of silicon-oxide to create switchable memory devices (see UK memory startup raises €1.5m, looks to imec).
The technology is based on fab-friendly materials and requires no modifications to FEOL processing and can be integrated in a standard BEOL metal stack. Resistive RAM (RRAM or ReRAM) in numerous forms is being touted as a replacement for embedded flash memory for microcontrollers, IoT and edge AI.
SureCore will help Intrinsic make the technology available to SoC developers. No timetable was given for the roll out which will likely require multiple passes of test chip evaluation making use of multiple foundry processes.
“Our RRAM technology provides a step change in performance and power metrics compared to existing solutions. Working closely with sureCore memory design experts will allow us to dramatically reduce time-to-market,” said Mark Dickenson, CEO of Intrinsic, in a statement.
Dickenson continued: “Scaling challenges with Flash have driven the industry to innovate with new magnetic and resistive solutions aiming to provide high density non-volatile storage. Typically, however, these technologies provide relatively slow access or additional integration challenges. Either way the result is that their content is copied to a standard SRAM before it is used. The holy grail is, of course, a low-power non-volatile memory with the read performance of SRAM and this is now a very realistic possibility with our RRAM.”
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