Surface mount L-Band 90 W GaN power module claims industry first
Optimized for L-Band commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2 to 1.4 GHz, this 2-stage, fully matched GaN in Plastic power module scales to peak pulse power levels of 100 W in a 14 x 24 mm package size – delivering twice the power of comparably sized competing products.
The company’s high gain GaN in Plastic power modules are the first and only GaN-based modules to support surface mount technology (SMT) assembly, providing significant cost and process advantages compared to ceramic-packaged flange-mount components. Delivering clear benefits in size, weight and power (SWaP) while enabling high volume manufacturing efficiency, the GaN power modules extend the performance attributes of its discrete GaN in Plastic power transistors and establish new standards for GaN module integration.
Under pulsed conditions, these modules deliver output power greater than 90 W, with 30 dB typical associated power gain and 58% typical power added efficiency. Supporting 50 V operation and up to 3 ms pulse width/duration for improved time on target, the company’s GaN in Plastic power modules reduce overall power consumption and cooling requirements compared to existing options.
The module features a Land Grid Array (LGA) pattern for enhanced thermal flow and “True SMT” assembly. All inputs and outputs are formed on the back of the module and include edge castellations for ease of assembly inspection. The module’s flexible design allows for gate and/or drain pulsing, and includes a gate voltage sense port for use in temperature compensation or pulse droop compensation. Leveraging sophisticated thermal management techniques to ensure high reliability, the calculated mean-time-to-failure (MTTF) at 200 ⁰C is approximately 600 years.
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