SweGaN sees RF strategic backing, joint product development
GaN-on-SiC wafer developer SweGaN has signed a strategic investment and product development deal with RFHIC in South Korea.
The deal will see joint R&D and product development with RFHIC around the gallium nitride on silicon carbide wafers developed by SweGaN. The amount of the investment was not disclosed.
Over the last decade, SweGaN has been developing and producing high-performance GaN-on-SiC epitaxial solutions for RF and power devices that can be used in various applications such 5G telecommunications infrastructure, defense radars, satellite communications, on-board chargers, and data centre.
The strategic investment by RFHIC will help drive market penetration in RF and microwave devices and sees SweGaN expand its in-house manufacturing capacity and R&D capability.
Wafer maker SweGaN funded by Atlantic Bridge, MediaTek
“With the accelerating demand for high-performance semiconductor materials to power a multitude of applications and increase the efficiency in an energy-conscious world, the new equity investment will support SweGaN’s capacity expansion plan of its best-in-class GaN-on-SiC epitaxial wafers and tap joint product developments with RFHIC,” said Jr-Tai Chen, CEO and Founder at SweGaN (above)
“We are very proud to partner with RFHIC, a leading RF GaN innovator who has the passion and commitment to amplify the world by providing top-efficiency and cutting-edge GaN solutions,” he said.
The higher performance SiC substrate allows higher power RF chips for 5G communications and radar.
“As RFHIC maps its future strategy for GaN semiconductors including accelerated market demand for products in 5G, 6G, satellite communication and more, SweGaN’s high-performance 6-inch GaN epiwafers for RF and power semiconductors – with exemplary high-power efficiency – provide a strong fit for our technological roadmap and diversification of gallium nitride epitaxial wafer suppliers,” said Dr. Samuel Cho, CTO, and co-founder of RFHIC.
“SweGaN’s unique epitaxial wafer development and manufacturing technology is a key factor in the high performance of gallium nitride semiconductors that we can tap in developing new products in the 4GHz ultra-high frequency band increasingly sought after by the market,”W he said.
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