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SiC MOSFET platform drives efficiency, cuts system costs
SiC MOSFET platform drives efficiency, cuts system costs
Technology News |
Gen 4 SiC MOSFET technology platform supports long-term roadmaps for high-performance, application-optimized products.
Chinese buyers swoop on BelGaN equipment assets
Chinese buyers swoop on BelGaN equipment assets
Business news |
Chinese companies were among the main buyers at bankruptcy auction of chip manufacturing equipment belonging to BelGaN, according to The…
Onsemi and Würth boost accuracy in virtual design for power electronics
Onsemi and Würth boost accuracy in virtual design for power electronics
Business news |
Power loss model generator now includes passive components to more accurately model power electronic designs and enable faster time-to-market.
Automotive-grade 1200-V IGBTs offer leading low loss characteristics
Automotive-grade 1200-V IGBTs offer leading low loss characteristics
New Products |
The IGBTs have high short-circuit tolerance while low losses boost efficiency in automotive and industrial applications.

TI converts Japanese 200mm fab to GaN, quadruples capacity
TI converts Japanese 200mm fab to GaN, quadruples capacity
News |
Texas Instruments has begun the production of gallium nitride (GaN) semiconductors at a 200mm wafer fab in Aizu, Japan. Together with production at Dallas, Texas, this will quadruple TI’s GaN…
CEO interview: GuRu’s Derhacobian on 24GHz wireless power
CEO interview: GuRu’s Derhacobian on 24GHz wireless power
Interviews |
Startup GuRu Wireless Inc. (Pasadena, Calif.) is looking to invigorate the market for wireless power transfer with its beam-formed version of technology. GuRu Wireless was spun out of Caltech in…
Harwin shows durable board-to-board connectors
Harwin shows durable board-to-board connectors
New Products |
High-performance, robust, space-saving interconnects address data, power, size, weight and reliability requirements of embedded designs.
Mobile test platform for offshore wind turbines
Mobile test platform for offshore wind turbines
Technology News |
Researchers at the Fraunhofer Institute for Wind Energy Systems IWES have developed a mobile test platform that enables realistic tests to be performed at full load, even on offshore wind…
EPC, Innoscience both claim victory in GaN patent fight
EPC, Innoscience both claim victory in GaN patent fight
Business news |
Power semiconductor vendors Efficient Power Conversion Corp. and Innoscience have both claimed victory following an interim determination from the US International Trade Commission on disputes over GaN technology. EPC said…
Globalfoundries buys GaN IP portfolio from Tagore
Globalfoundries buys GaN IP portfolio from Tagore
Business news |
Foundry chipmaker GlobalFoundries Inc. has acquired a portfolio of gallium nitride power semiconductor intellectual property form Tagore Technology Inc. (Chicago, Illinois). Tagore Technology was founded in January 2011 to pioneer…
1200 V SiC Schottky diodes boost efficiency and reliability
1200 V SiC Schottky diodes boost efficiency and reliability
New Products |
Merged PIN Schottky diodes offer lower forward voltage drop, capacitive charge, and reverse leakage current for switching power designs.
PMIC for wearables supports voltage scaling
PMIC for wearables supports voltage scaling
New Products |
Orca Semiconductor Inc. (Milpitas, Calif.), a startup formed to offer analog and mixed-signal circuits, has launched its first product a PMIC for wearables and hearables. The company, founded in 2022,…
China’s Innoscience responds to Infineon’s European GaN lawsuits
China’s Innoscience responds to Infineon’s European GaN lawsuits
News |
China’s gallium nitride semiconductor maker Innoscience has questioned the validity of the patent at the heart of Infineon’s most recent claims of patent infringement against it. After filing a lawsuit…
Automotive MOSFETs boost switching efficiency
Automotive MOSFETs boost switching efficiency
New Products |
40-V portfolio adds 80 V and 100 V MOSFETs, improves low on-state resistance, and offers devices in robust, lead-free packages.
Isolated probing system for fast switching signals
Isolated probing system for fast switching signals
New Products |
Probing system enables extremely accurate measurements of fast switching signals, especially in environments with high common-mode voltages and currents.
Low power cryogenic memory to cut power usage
Low power cryogenic memory to cut power usage
Technology News |
Addressing the rise in AI power requirements, low power cryogenic memory technology could help dramatically cut data centre power usage.
Cambridge GaN Devices signs GaN PSU MoU with ITRI
Cambridge GaN Devices signs GaN PSU MoU with ITRI
Business news |
MOU covers 140-240 W USB-PD adaptors exceeding 30 W per cubic inch for e-mobility, tools, notebooks and cell phones as the first target.
Range of compact power inductors come in eight package sizes
Range of compact power inductors come in eight package sizes
New Products |
Compact yet extremely efficient moulded flat wire inductors feature high current capacity up to 56 A saturation current.
Development boards for fast, high-power wireless charging
Development boards for fast, high-power wireless charging
New Products |
Development board combination with 50-W transmitter and receiver simplifies fast wireless charging utilizing ST Super Charge protocol.
Top-side cooled 600-V power MOSFET delivers low on resistance
Top-side cooled 600-V power MOSFET delivers low on resistance
New Products |
Fourth-generation MOSFET enables higher power ratings and density while lowering conduction and switching losses.
ROHM and STMicroelectronics expand SiC wafer supply agreement
ROHM and STMicroelectronics expand SiC wafer supply agreement
Business news |
Expanded agreement will bring additional volumes of 150mm SiC substrate wafers to support capacity ramp-up for automotive and industrial applications.
Actuation power system simplifies aircraft electrification
Actuation power system simplifies aircraft electrification
Technology News |
Configurable family of companion driver boards using hybrid power drive modules available in SiC or Si technology enable transition to electric actuation systems.
High-reliability GaN load switch now available off the shelf
High-reliability GaN load switch now available off the shelf
New Products |
Robust 650-V GaN load switch with integrated isolated driver features high-performance, fast switching time and handles up to 60 A.
Solid-state isolators deliver faster switching at lower power
Solid-state isolators deliver faster switching at lower power
New Products |
Solid-state isolators achieve faster and more reliable circuit switching with up to 70 percent lower power dissipation.
IGBT power modules reduce conduction/switching losses
IGBT power modules reduce conduction/switching losses
New Products |
Built on trench IGBT technology, the half-bridge devices offer a choice of low VCE(ON) or low Eoff for high-current inverter stages.
Development system for RCP and HIL applications
Development system for RCP and HIL applications
New Products |
The all-in-one development system features over 100 I/O channels combined with high calculation speed and versatility in a compact enclosure.
Plug-and-play gate driver for HV SiC modules
Plug-and-play gate driver for HV SiC modules
News |
The highly integrated 3.3 kV XIFM plug-and-play digital gate driver is designed to work out-of-the-box with high-voltage SiC-based power modules.
NGK and Ambient partner on sustainable maintenance-free power
NGK and Ambient partner on sustainable maintenance-free power
Technology News |
Collaboration to develop power products for maintenance-free connected devices that reduce reliance on disposable batteries.


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