Thermal substrate boost for GaN transistors

Thermal substrate boost for GaN transistors

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By Nick Flaherty

The substrate provides design flexibility and scalability with three power level configurations up to 1.5 kW (GS66504B), 3 kW (GS66508B), and 6 kW (GS66516B). The driver board features the highest power density due to having the lowest system thermal resistance. The layout also allows for less assembly steps and lowers cost of materials.

GaN Systems is also showing a low current 3.5 A, 8A, and 11A evaluation kit with EZDrive circuit, which eliminates the need for a discrete driver. The GS-065 kit provides a low-cost solution that offers more design flexibility and reduces the number of components.

“The selection of reference designs, circuit simulation tools, and evaluation kits from GaN Systems and our ecosystem partners empower design engineers to take advantage of GaN benefits – high efficiency and low size, weight, and total system cost – to accelerate product time-to-market,” said Paul Wiener, Vice-President, Strategic Marketing for GaN Systems.

A half-bridge and bridgeless totem pole PFC reference designs use uPI Semiconductor drivers and GaN Systems 100 V GaN E-HEMTs provide cost effective, higher efficiency solutions in applications such as 48 V (half-ridge) and compact 1U switch mode power supplies (BTP PFC) for the enterprise market. A half-bridge design on GaN Systems’ evaluation board uses the new 650 V GaN E-HEMTs for smaller consumer and enterprise power supply applications that reduces existing PCB footprints and bill of materials (BOM) costs.

The full 1.5 kW Bridgeless Totem Pole PFC reference design using 650 V E-HEMTs featuring an EMI filter and surge protection that can be used in applications such as data center power supplies to increase efficiency, reduce systems size, and reduce system BOM cost. The evaluation board can also start up to full load condition.

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