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Thermocompression bonding: an approach for narrow-pitch die-to-die and die-to-wafer 3D stacking

Thermocompression bonding: an approach for narrow-pitch die-to-die and die-to-wafer 3D stacking

Technology News |
By eeNews Europe



14.00

One of the key challenges to making 3D IC manufacturing a reality is the development of high-throughput automated process flow for narrow-pitch, high-accuracy die-to-die and die-to-wafer bonding.

Currently flip-chip and reflow soldering are used in combination, these solutions require lenient bonding accuracy on large bump pitches (around 150-50 µm bump pitch). But bump pitches need to further scale down to 40-10 µm to realize a sufficiently high performance.

This needs high accuracy in bonding within the range of 1-2um at 3sigma.

An automatic process flow is essential for industrial adoption and thermocompression bonding could allow this high bonding accuracy on narrow bump pitches, though the long cycle times due to temperature and pressure profiles and processing methods make this approach comparatively slow.

Imec and Besi will conduct joint research to develop a high-throughput thermocompression bonder in an automated process flow, combining high accuracy with shorter cycle times.

Visit imec at www.imec.be

Visit Besi at www.besi.com

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