Third generation SiC for AI data centres, EV charging
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Navitas Semiconductor has launched a series of silicon carbide (SiC) switches for data centre and automotive applications.
The Gen-3 ‘Fast’ (G3F) 650 V and 1200 V SiC MOSFETs developed by Navitas are optimized for higher switching speeds through improved thermal performance. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
- First 12kW power supply design for AI data centres
- Navitas expands into silicon carbide with $100m GeneSiC buy
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver higher efficiency, enabling up to 25°C lower case temperature, and up to 3x longer life than other SiC devices.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) on-resistance under real-life operation at high temperatures compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
- Infineon takes SiC MOSFET down to 400V for AI server .
- Navitas adds PLECS Models for GeneSiC trench MOSFETs
The devices cover industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications such as AI data centre power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS).
A 4.5 kW high-power density AI Server PSU reference design in the CRPS185 form-factor, showcases the 650V, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is achieved, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, the 1200V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” said Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
The SiC devices are available now to qualified customers and will be shown at the PCIM show in Germany next week.
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