Third generation SiC MOSFETs available as bare die

Third generation SiC MOSFETs available as bare die

Technology News |
By Nick Flaherty

The new planar SiC MOSFETs from STMicroelectronics are specifically optimized for these high-end automotive applications including EV traction inverters, on-board chargers, and DC-DC converters, as well as e-climate compressors. The new generation is also suitable for industrial applications by boosting the efficiency of motor drives, renewable-energy converters and storage systems, as well as telecom and data-centre power supplies.

ST has completed qualification of the third-generation SiC technology platform and expects to move most of the derivative products to commercial maturity by the end of 2021. Devices with nominal voltage ratings from 650V and 750V up to 1200V will be available, giving more choices for designers to address applications operating from ordinary AC-line voltages up to those of high-voltage EV batteries and chargers with 800V inverters.

The first products available are the 650V SCT040H65G3AG, priced at $5.00 and a 750V device in die form (datasheet and quotation upon request).

Related articles

“We continue to drive this exciting technology forward with innovations at both the device and package levels. As a fully integrated SiC products manufacturer, we are able to deliver continued improved performance to our customers,” said Edoardo Merli, Power Transistor Macro-Division General Manager and Group Vice President of STMicroelectronics’ Automotive and Discrete Group. “We are investing relentlessly to support our automotive and industrial programs expected to generate $1 billion in SiC revenue in 2024.”

ST will offer the third-generation devices in various forms, including bare dice, discrete power packages such as STPAK, H2PAK-7L, HiP247-4L, and HU3PAK and power modules of the ACEPACK family. The packages have specially placed cooling tabs that simplify connection to base-plates and heat spreaders in EV applications.

The company is developing larger 200mm SiC wafers to reduce the cost of producing the MOSFETs, as well as vertical transistors that are have a smaller footprint than the planar version and so fit mor on a wafer.

Other articles on eNews Power

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles