The TK160F10N1L offers min/max Vth of 2.5V/3.5V versus its predecessor’s 2V/4V range, reducinh dead time in half-/H-/B6-bridge applications and higher performance, low-loss synchronous switching in parallel operation
The new MOSFET is ideal for automotive power switching applications. In these designs its tighter Vth specification could contribute to a dead time reduction in half-/H-/B6-bridge schemes. This is because the max Vth difference between low-side MOSFET and high-side MOSFET is smaller.
In applications where MOSFETs are connected in parallel, a tighter Vth spec leads to improved synchronous switching among paralleled MOSFETs. As a result, the switching loss will be distributed more evenly among the MOSFETs. If a single MOSFET turns on earlier or turns off later than other MOSFETs in parallel, the switching loss concentrates on this single MOSFET.
Toshiba’s latest UMOS VIII-H semiconductor process has been used in the TK160F10N1L for its switching ripple suppression capability that contributes to EMI noise reduction. Target applications for the new MOSFET include automotive motors in 48V systems, DC-DC converters and load switches.
The TK160F10N1L is supplied in a TO-220SM(W) package, has a maximum on-resistance (RDS(ON)) rating of 2.4mΩ and will conform with AEC-Q101 automotive level qualification requirements.