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TI cuts 60 V MOSFET size by 80% with FemtoFET

TI cuts 60 V MOSFET size by 80% with FemtoFET

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By Nick Flaherty



The CSD18541F5 FemtoFET is offered in a 1.53-mm-by-0.77-mm silicon-based Land Grid Array (LGA) package that has an 80 percent smaller footprint than load switches in SOT-23 packages (shown above). The MOSFET maintains a typical on-resistance (Rdson) of 54 mΩ and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.

The 54 mΩ of Rdson at 10-V gate-to-source (VGS) is 90 percent less than traditional 60-V load switches, providing lower power loss and integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.

Available in volume now from TI and its authorized distributors, the CSD18541F5 is packaged in a 3-pin LGA package and priced at US$0.14 in 1,000-unit quantities.

You can download the PSpice transient models here and find more information on FemtoFETs here.

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