
Tiny common-drain N-channel MOSFET targets Li-ion batteries
Toshiba Electronics Europe GmbH has launched a 12 V common-drain N-channel MOSFET with a current rating of 20 A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those commonly used for smartphones, tablets, power banks, compact digital cameras, digital SLR cameras and other similar applications.
The new 20-A SSM14N956L MOSFET is rated for a 12-V source-to-source voltage (VSSS) and uses Toshiba’s micro-process, in common with the already released 13.5-A SSM10N954L. This ensures excellent low on-resistance (RSS(ON)) characteristics, as low as 1 mΩ, which limits conduction losses. Additionally, the process delivers low gate-source leakage current (IGSS) of ±1 µA (maximum), allowing for low standby power consumption. Together, these attributes allow for extended battery operation between charges.
Li-ion battery pack safety is enhanced by highly robust protection circuits that reduce heat generation while charging and discharging. In order to meet the required charging performance, these circuits must have low power consumption. Given the compact nature of these systems, suitable MOSFETs must be small and thin while delivering low levels of on-resistance.
In order to fit in the constrained spaces available in these applications, the new SSM14N956L is designed as a chip-scale package, known as TCSPED-302701. The dimensions are just 2.74- x 3.0-mm with a typical height of just 0.085-mm.
Shipments of the new device are available now and Toshiba will continue to develop MOSFET products for protection circuits in devices powered by lithium-ion battery packs.
https://toshiba.semicon-storage.com/eu
Related articles
QPT drives high-power GaN up to 20 MHz
600V SJ MOSFETs feature fast recovery body diodes
Toyoda Gosei develops fast high-voltage GaN power device
MOSFET relays deliver high sensitivity and dielectric strength
EV and infrastructure 1200-V SiC MOSFETs and power modules
