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TI’s 80V GaN power stage – in distribution

TI’s 80V GaN power stage – in distribution

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By eeNews Europe



LMG5200 is an 80V, 10A integrated GaN FET power stage that consists of a high-frequency driver and two 15 mOhm GaN FETs in a half-bridge configuration. The device reduces electromagnetic interference (EMI) while increasing power-stage efficiency by minimizing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 device is built with advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz. Its logic-compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage. This allows the inputs to be directly connected to the outputs of an analogue PWM controller with up to 12V power supply, eliminating the need for a buffer stage. A bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

 

Mouser is also stocking the LMG5200EVM-02 evaluation module, a complete working power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or other converter topology using a half bridge. It can be used to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and voltage change over time (dV/dt).

 

Mouser; www.mouser.com/new/Texas-Instruments/ti-lmg5200-power-stage/

 

 

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