Top-side GaN cooling reduces 5G radio size
NXP has developed top-side cooling packaging technology for smaller, thinner and lighter radio units and faster and easier deployment of 5G base stations
The top-side cooled RF GaN amplifier modules simplify design and manufacturing of the radio units without compromising performance by eliminating bulky heatsinks and the RF shield.
This can reduce the thickness and weight of the radio by more than 20 percent for smaller base stations that can be more easily and cost-effectively installed and can blend more discretely into the local environment.
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NXP’s first top-side cooled RF power module series is designed for 32T32R, 200 W radios covering 3.3 GHz to 3.8 GHz. The devices combine the company’s in-house LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance, delivering 31 dB gain and 46 percent efficiency over 400 MHz of instantaneous bandwidth.
“Top-side cooling represents a significant opportunity for the wireless infrastructure industry, combining high power capabilities with advanced thermal performance to enable a smaller RF subsystem,” said Pierre Piel, Vice President and General Manager for Radio Power at NXP. “This innovation delivers a solution for the deployment of more environmentally friendly base stations, while also enabling the network density needed to realize the full performance benefits of 5G.”
The A5M34TG140-TC, A5M35TG140-TC and A5M36TG140-TC products are available today. The A5M36TG140-TC will be supported by NXP’s RapidRF reference board series.
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