Toshiba begins volume production of SiC power devices
Production will take place at Toshiba’s Himeji Operations–Semiconductor, Hyogo Prefecture, Japan.
Toshiba will manufacture Schottky Barrier Diodes (SBD) as the first of the company’s new line-up of SiC products. The SBD is suited for applications that include power conditioners for photovoltaic power generation system. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient.
SiC power devices offer more stable operation than current silicon devices – even at high voltages and currents – as they reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.
Visit Toshiba at www.toshiba-components.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
