Toshiba cuts SiC MOSFET losses by 40% with 4pin Kelvin package
Toshiba Electronics Europe has launched a series of 650V and 1200V silicon carbide (SiC) MOSFETs with four pin packages that cut losses by up to 40%.
The TWxxxZxxxC series of ten SiC MOSFET devices is aimed at switching power supplies for servers & data centres, electric vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS).
- Industry’s first 2200V Dual SiC MOSFET module
- SiC 650-V Schottky barrier diodes enhance efficiency
- 1200V SiC MOSFETs for industrial power conversion
Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin. This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic inductance effects of the internal source wire and improving high-speed switching performance.
Compared to the existing third generation N-series TW045N120C 3-pin TO-247, the TW045Z120C shows an improvement in turn-on loss of approximately 40% while the turn-off loss is improved by around 34%.
The series includes five devices with a drain-source (VDSS) rating of 650V and a further five devices rated at 1200V for higher voltage applications. The typical drain-source on-resistance (RDS(ON)) is ranging between 140mΩ and 15mΩ. Combined with low gate drain charge (QGD) values, it will enable low losses even in high frequency applications.
The devices are capable of delivering continuous drain currents (ID) of up to 100A and are now shipping.
toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/sic-mosfets.html
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
