Toshiba Electronics Europe expands compact, integrated IGBT technology for induction heating
Optimised for voltage resonance inverter switching, the new 1200 V N-channel, ‘enhancement mode’ GT40QR21 comprises an IGBT and a reverse recovery freewheeling diode monolithically integrated into a single, compact device. Maximum current ratings are 40 A at 25ºC and 35 A at 100ºC and the IGBT can operate with extended junction temperatures of up to 175ºC.
Toshiba’s GT40QR21 is designed for very high speed switching – typical IGBT fall time (tf ) and turn-off time (toff ) with a collector current of 40 A are just 0.2 µs and 0.4 µs respectively, while typical reverse recovery time (trr ) for the freewheeling diode is 0.6 µs (IF = 15 A). Typical collector-emitter saturation voltage (V CE(sat) ) is rated at just 1.9 V (IC = 40 A).
Supplied in a TO-3P(N), TO247-equivalent package the IGBT has dimensions of 15.5 mm x 20.0 mm x 4.5 mm and a maximum junction-to-case thermal resistance (R th(j-c) ) of 0.65ºC/W.
Visit Toshiba Electronics Europe at www.toshiba-components.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
