Toshiba Electronics releases next-generation MOSFETs for battery operated equipment
Built on Toshiba’s P-channel U-MOSVI semiconductor process technology, the SSM3J133TU, SSM3J134TU and SSM3J135TU MOSFETs have respective maximum drain current (I D ) ratings of -5.5 A, -3.2 A and -3.0 A. All of the devices show maximum ratings of 20 V for the drain-source voltages (V DSS ) and ±8 V for the gate-source voltages (V GSS ).
In addition to the maximum gate-source voltage these MOSFETs also exhibit a maximum gate threshold voltage (V th ) of only 1.0 V enabling stable switching operation from 1.5 V. With this low voltage switching the SSM3J133TU, SSM3J134TU and SSM3J135TU are ideal solutions in battery powered switching applications.
The new P-channel MOSFETs ensure optimum efficiency and switching speeds through a design that minimises ON resistance (R DS(ON) ) and input capacitance (C iss ). As the SSM3J133TU, SSM3J134TU and SSM3J135TU exhibit different maximum R DS(ON) and C iss values designers have the flexibility to choose the optimum device for their given application, either the SSM3J133TU with lowest R DS(ON) for low loss or the SSM3J135TU with lowest C iss for high speed operation. The SSM3J134TU offers a balanced performance of low loss and high-speed switching. In addition to these three MOSFETs the SSM3J132TU exhibits a maximum R DS(ON) as low as 98 mW at a gate source voltage of 1.2 V.
All of the new MOSFETs are supplied in UFM surface mount packaging that requires a board space of 2.0 mm x 2.1 mm with a body height of 0.7 mm. Due to the flat body structure this package offers a power dissipation of 500 mW on a footprint of a standard SOT-323 package.
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