Toshiba ships 1200V Silicon Carbide (SiC) MOSFET
Toshiba Electronics Europe has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications including 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters and bi-directional DC-DC converters for uninterruptible power supplies (UPS).
The 1200V TW070J120B SiC power MOSFET is built with Toshiba’s second-generation chip design for enhanced reliability. It has an input capacitance (CISS) of 1680pF (typ.), a gate-input charge (Qg) of 67nC (typ.) and a drain-to-source On-resistance (RDS(ON)) of 70mΩ (typ.).
When compared with a 1200V silicon IGBT such as Toshiba’s GT40QR21, the new device reduces turn-Off switching loss by approximately 80% and switching time (fall time) by around 70 percent, while delivering low On-voltage characteristics with a drain current (ID) of up to 20A.
The gate threshold voltage (Vth) is set high (in the range 4.2V to 5.8V), which reduces the possibility of unintended or spurious turn On or Off. Furthermore, incorporation of a SiC Schottky barrier diode (SBD) with a low forward voltage (VDSF) of just -1.35V (typ.) also helps to reduce losses.
Housed in a TO-3P(N) package, the TW070J120B MOSFET will enable the design of higher efficiency power solutions, especially in industrial applications, where the increased power density will also contribute to reduced equipment size and weight.
www.toshiba.semicon-storage.com
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