Toshiba to build new 300mm power fab

Toshiba to build new 300mm power fab

Business news |
By Nick Flaherty

Toshiba is to build a 300mm wafer fab for power semiconductors

Construction of the fab at its main discrete semiconductor production base, Kaga Toshiba Electronics, in Ishikawa Prefecture will start in spring 2023 . Construction will take place in two phases, with production starting in 2024.

When Phase 1 reaches full capacity, Toshiba’s power semiconductor production capacity will be 2.5 times that of today.

So far Toshiba has met demand for MOSFET and IGBT devices  by increasing production capacity current on 200mm lines, and accelerating the start of production on 300mm production lines to the end of 2022, six months earlier than planned when the investment was announced in March last year. These lines will be built in the same building as the 200mm lines at Kaga, while the new 300mm lines will be in a new building on the site.

The company has also been expanding production of discrete semiconductors, including power devices, at Japan Semiconductor, a manufacturing subsidiary that mainly produces system chips.

Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends, said the company, with a view to overall capacity in 2023.

The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines; and the latest energy saving manufacturing equipment to reduce environmental burdens. It will also aim to achieve the “RE100” goal of 100% reliance on renewable energy. Product quality and production efficiency will be improved by introducing artificial intelligence and automated wafer transportation systems.

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