Toyoda Gosei develops fast high-voltage GaN power device

Toyoda Gosei develops fast high-voltage GaN power device

Technology News |
By Jean-Pierre Joosting

Toyoda Gosei Co., Ltd., and Powdec K.K., have jointly developed a high-performance horizontal GaN power device that will lead to improved performance in the power converters used in solar power generation and other equipment.

Today, as society moves toward carbon neutrality, the commercialization and spread of next-generation power devices that can reduce power loss during control holds great promise. Among these devices, GaN power devices feature high-speed operation, but higher breakdown voltage for higher power operation has been an issue in wider application.

World-class power of 800-V and On/Off operation of one millionth of a second was confirmed using a module equipped with an originally designed GaN power device under development by Toyoda Gosei and Powdec. This demonstration of a power device that offers both high-voltage and high-speed operation is promising for reduced power loss in solar power generation as well as other benefits. The companies are aiming to ensure stable continuous operation and durable quality for early commercialization.


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