Transphorm has launched a TO-263 D2PAK surface mount package for its 650V SuperGaN GaN-on-silicon devices.
The packaging allows the TP65H050G4BS to have a typical on-resistance of 50 milliohms and is Transphorm’s seventh SMD, adding to a wide range of currently available PQFN devices for lower- to mid-power applications.
The JEDEC-qualified TP65H050G4BS offers several advantages to designers and manufacturers developing high power (single-to-multi-kilowatt) systems typically used in data centre and broad industrial applications with a gate robustness of ±20 Vmax and silicon noise immunity threshold of 4V.
Engineers use the larger D2PAK where both higher power and surface mount packaging is needed, enabling better thermal performance versus. PQFN type packages while increasing the efficiency of PCB assembly through the use of a single manufacturing flow.
Available as a discrete device, the D2PAK is also provided on a vertical daughter card to increase the power density of Transphorm’s TDTTP2500B066B-KIT—a 2.5 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board. It can also be swapped into the synchronous half-bridge TDHBG1200DC100-KIT evaluation board to drive multi-kilowatt power.
“The D2PAK is an important addition to our portfolio. It expands the usability of our SMDs to high power applications, where before we supported these with through-hole devices,” said Philip Zuk, SVP of Worldwide Marketing, Applications, and Business Development, Transphorm. “It’s another step in helping customers leverage our GaN platform’s advantages with familiar TO-XXX packages that eliminate design challenges, simplify system development, and quicken go-to-market ramps.”
Transphorm points out that these packages cannot be used with alternative e-mode GaN technology given its inherent gate sensitivity to damage.
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