Transphorm signs $4m GaN deal with Yaskawa

Transphorm signs $4m GaN deal with Yaskawa

Business news |
By Nick Flaherty

The $4m funding for GaN development comes from Yaskawa as a major investor in Transphorm.

“Transphorm greatly values its long-term relationship with Yaskawa as it has helped to advance the development of Transphorm’s GaN FET platforms, resulting in high performance power devices for industrial and motor control applications as well as other focused markets,” said Umesh Mishra, Co-founder and CTO of Transphorm. “The device development under this contract will further enhance the specifications of Transphorm’s products, while maintaining our best-in-class quality and reliability. These enhanced product features will make our new GaN products appealing for servo drives for robotics and motion control as well as a broader range of industrial and white goods applications.”


Transphorm has one of the largest power GaN IP portfolios of more than 1,000 owned or licensed patents and produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The company has a vertically integrated device business model covering design, fabrication, device, and application support with manufacturing operations at its headquarters in Goleta, California, and Aizu, Japan

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