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Transphorm signs global deal with Mouser for its GaN power devices

Business news |
By Nick Flaherty


Mouser Electronics has signed a global deal to distribute Transphorm’s lines of JEDEC- and AEC-Q101-qualified GaN FETs and evaluation boards.

The 900 V GaN FETs in a TO-220 package and 650 V GaN FETs in TO-247 and TO-220 packages combine high-voltage GaN HEMT and low-voltage MOSFET technologies. The devices feature low crossover losses, reduced gate charge, and smaller reverse recovery charge, offering similar field reliability to silicon carbide (SiC) FETs and improved performance when compared to silicon MOSFETs. The devices also have a high threshold voltage of 4 V and gate robustness rating of ±20 V.

The automotive-qualified devices include the TPH3205WSBQA, the first device to earn AEC-Q101 qualification, and the TP65H035WSQA, the first AEC-Q101-qualified device rated to 175ºC. In-vehicle power systems using the 650 V FETs can gain up to 40 percent more power density while reducing overall system costs by as much as 20 percent when compared to similar silicon-based solutions says Transphorm.

The combination of the GaN FET and MOSFET means the devices pair with off-the-shelf gate drivers, improving efficiency in both hard- and soft-switched circuits while allowing for ease of driveability and designability. When used in an AC-DC bridgeless totem-pole power factor correction (PFC), the devices provide higher power density and reduced system cost in a broad range of industrial, datacom, and automotive applications as well as consumer computing power systems and adapters.

“We are pleased to add Transphorm to our power line card,” said Kristin Schuetter, Mouser Vice President of Supplier Management. “Transphorm’s innovative high-performance GaN transistors and evaluation platforms greatly benefit designers and manufacturers developing high-voltage power-conversion applications, in a variety of vertical markets.”

“We’re excited to join Mouser’s list of global suppliers as a manufacturer of high-quality, high-reliability GaN devices,” said Philip Zuk, Vice President of Worldwide Technical Marketing and North America Sales at Transphorm. “The agreement provides us with an incredible opportunity to bring our industry-leading GaN technology to Mouser’s extensive customer base. We look forward to working with their team as we support customers seeking to develop next-generation power systems.”

Mouser is also stocking related evaluation platforms to allow designers to study switching characteristics and efficiency. The kits support various power system topologies, including inverters, half-bridge buck or boost (through-hole and SMD solutions), and the bridgeless totem-pole PFC. They also cover a range of power ratings to support various applications. Examples include the 1.2 kW and 2.5 kW half-bridge evaluation platforms as well as the 2.5 kW and 4 kW bridgeless totem-pole PFC evaluation platforms.

www.mouser.com/transphorm


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