TrenchMOS power transistors tested for high reliability
The first products in NXP’s new automotive MOSFET family will be available in D2PAK, at voltage grades of 30V, 40V, 60V, 80V and 100V, with excellent RDSon performance across the range. Future Trench 6 releases will be made in all other automotive packages – including NXP’s high-reliability, high-performance Power-SO8 LFPAK56 – as part of a major portfolio expansion to offer complete application flexibility. The range will cover virtually all automotive applications – from simple lamp-driving to the sophisticated needs of power control in powertrain, body and chassis systems.
Trench 6 further enhances switching performance compared to previous generations of TrenchMOS, enabling very low QGD for a given RDSon, which is ideal for DC-DC switching applications in the car. NXP automotive power MOSFETs also offer true logic level variants for every product – a crucial feature that combines benchmark on-resistance performance with threshold voltage tolerance, to ensure that the MOSFET can be fully controlled at high temperatures.
“With our Trench 6 automotive power MOSFETs, we’re offering an optimized, high-reliability solution for virtually every MOSFET socket in the car,” said Ian Kennedy, product marketing manager, NXP Semiconductors. “Through extensive testing, we’ve demonstrated that Trench 6 – with its simple, evolutionary architecture and proven track record in the standard MOSFETs market over the past two years – can deliver the quality and reliability required to last the lifetime of the car.”
For more information visit https://www.nxp.com/automotivemosfets/trench6
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