TriQuint achieves record GaN reliability performance
The latest GaN benchmark supports highly-reliable integrated RF solutions that use less power, are compact, and serve wide frequency ranges. Any RF system can benefit from reduced maintenance and longer operational lifetimes arising from increased reliability such as commercial and defense RF infrastructure, broadband communications, first-responder radios and space-based applications.
“We’re pleased to announce this GaN reliability milestone,” said James L. Klein, Vice President and GM for Infrastructure and Defense Products. “The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before.”
TriQuint’s TQGaN25 process, qualified to operate up to 40 V, has achieved a mean time to failure (MTTF) of greater than 107 (10 million) hours* at 200 °C and greater than 106 (1 million) hours* at 225 °C. This reliability milestone was achieved with TriQuint’s newly-released Generation II 0.25-micron GaN on SiC (silicon carbide) process utilized for GaN product solutions and Foundry Services.
TriQuint achieved its latest GaN performance through in-house development programs. This new reliability also supports objectives of TriQuint’s Defense Production Act (DPA) Title III contract that is funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy. TriQuint is also reducing manufacturing cycle times and increasing yields while making other GaN enhancements that work hand-in-hand with DPA Title III goals.
All manufacturing enhancements are designed to support greater affordability of next-generation AESA (active electronically scanned array) radars, EW systems and commercial applications. Defense systems currently in technology development phases have production planned for 2016-2020.
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