Two team for 1500V GaN transistor on 24kW module

Two team for 1500V GaN transistor on 24kW module

Technology News |
By Nick Flaherty

Toyoda Gosei and Powdec in Japan have developed a high-performance horizontal GaN power device for a 24kW power converter suitable for solar power generation and other equipment.

The Polarization Super Junction GaN power transistor has a breakdown voltage of over 1500 V and a switching speed of 1ms.

Power devices are widely used in power control for industrial machinery, automobiles, home appliances and more. Today, as society moves toward carbon neutrality, the commercialization and spread of next-generation power devices that can reduce power loss during control holds great promise. Among these devices, GaN power devices feature high-speed operation, but higher breakdown voltage for higher power operation has been an issue in wider application.

The 1ms switching was down in an 800V, 30A module developed by Toyoda Gosei and Powdec. This demonstration of a power device that offers both high-voltage and high-speed operation is promising for reduced power loss in solar power generation and other benefits. The companies are aiming to assure stable continuous operation and durable quality for early commercialization.


If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles