Two test vehicles planned for SiO2 ReRAM
Weebit Nano Ltd. (Tel Aviv, Israel) has already successfully transferred the basic technology , originally developed at Rice University (Houston, Texas), to Leti (Grenoble, France) where it is collaborating on engineering refinement. The move towards a 40nm cell will continue in parallel with the realization of a kbit array in a 300nm process. These will be used as proofs of the idea and allow full chip integration of a 40nm ReRAM prototype and a move to megabit and terabit non-volatile memory in a 40nm or more advanced process. The 40nm node is approximately the minimum geometry used for 3D NAND production.
Weebit said it expects the porous silicon-dioxide based ReRAM will show excellent characteristics for use in smartphones, solid-state drives, automobiles, the Internet of Things and artificial intelligence. One of the key advantages Weebit has over other ReRAM developers is that its memory material of choice is already in extensive use in IC production.
The company added that it wants to initiate discussions with semiconductor memory companies around possible partnerships or collaborations.
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