
UK RRAM startup Intrinsic raises £7 million
Oxide-based RRAM startup Intrinsic Semiconductor Technologies Ltd. (London, England) has raised £7 million in an equity funding round plus £1 million in InnovateUK grants.
Intrinsic, is a 2017 spin-off from University College London, that is creating non-volatile memory following a similar technology path to Weebit Nano Ltd. (see Weebit ReRAM starts to roll at Embedded World).
The company claims its technology can read data 10x to 100x faster and write it 1000x faster than existing solutions, although it was not explicit about what technology it was comparing against. Most likely this was a comparison against flash memory rather than rival RRAM technologies. Intrinsic added that it uses common materials and is therefore less complex and less expensive compared to some other RRAM technologies. The technology is also CMOS-compatible. Instrinsic said.
“We believe RRAM has the potential to become the backbone for the next generation of edge and IoT computers at a time when data hungry intelligent applications are becoming more and more prevalent,” said Mark Dickinson, CEO of Intrinsic Semiconductor Technologies, in a statement. “By focussing on simplicity and manufacturability in our approach to RRAM we will open up a whole new array of market opportunities and this funding will play a critical role in helping us to attract highly skilled engineers to build out the commercial potential of Intrinsic,” he added.
The funding round was led by Octopus Ventures and supported by existing investors IP Group and the UCL Technology Fund.
Intrinsic was founded in 2017 by Professor Tony Kenyon, Dr Adnan Mehonic and Dr Wing Ng, who are leading researchers into non-volatile memory at the Department of Electronic and Electrical Engineering, University College London. The company has already received seed funding from UCLB, UCL Technology Fund and IP Group for its cutting-edge research in this sector.
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